for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance. typical applications include motor control, industrial and domestic lighting, heating and static switching absolute maximum ratings parameter symbol test condition unit BT151- 500 650 repetitive peak off state voltage v drm, v rrm *500 *650 v average on state current i t (av) half sine wave, t mb < 109oc 7.5 a rms on state current i t (rms) all conduction angles a non repetitive peak on state current i tsm half sine wave, t j =25oc prior to surge t=10ms a t=8.3ms a l 2 t for fusing i 2 t t=10ms a 2 s repetitive rate of rise of on state current after triggering dl t /dt i tm =20a, i g =50ma, dl g /dt=50ma/ m s a/ m s peak gate current i gm a peak gate voltage v gm v peak reverse gate voltage v rgm v peak gate power p gm w average gate power p g (av) over any 20ms period w storage temperature t stg - 40 to +150 oc operating junction temperature t j oc thermal resistance junction to mounting base r th (j-mb) k/w junction to ambient r th (j-a) in free air k/w *although not recommended, off state voltage upto 800v may be applied without damage, but the thyristor may switch to the on state. the rate of rise of current should not exceed 15a/ m m s 0.5 60 typ 125 1.3 max value 12 110 100 5.0 5.0 50 50 2.0 5.0 c g a description mechanical dimensions BT151-500~650 to-220ab ***=date code marking BT151 BT151 - 500 f *** f *** - 650 a
electrical characteristics (t j =25oc unless specified otherwise) parameter symbol test condition min max unit gate trigger current i gt v d =12v, i t =0.1a 15 ma latching current i l v d =12v, i gt =0.1a 40 ma holding current i h v d =12v, i gt =0.1a 20 ma on state voltage v t i t =23a 1.75 v gate trigger voltage v gt v d =12v, i t =0.1a 1.5 v v d =v drm (max), i t =0.1a,t j =125oc 0.25 v off state leakage current i d, i r v d = v drm (max), v r =v rrm (max) t j =125oc 0.5 ma dynamic characteristics parameter symbol test condition min typ max unit critical rate of rise of off state voltage dv d /dt v dm =67% v drm =(max), t j =125oc, exponential waveform gate open circuit 50 v/ m s r gk =100 w 200 v/ m s gate controlled turn on time t gt i tm =40a, v d =v drm (max), i g =0.1a, dl g /dt=5a /m s 2.0 m s circuit commutated turn off time t q v d =67% v drm (max), t j =125oc, i tm =20a, v r =25v, dl tm /dt=30a/ m s, dv d /dt=50v/ m s, r gk =100 w 70 m s
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